Method of making avalanche photodiode

Details Method of making avalanche photodiode Method of making avalanche photodiode

1993-10-19

1994-09-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 5, 437133, 257438, H01L 3118

Patent

active

053468376

ABSTRACT:
A method of making an avalanche photodiode includes depositing a light-absorbing semiconductor layer of a first conductivity type on a semiconductor substrate of the first conductivity type; successively depositing multiple pairs of semiconductor layers on the light-absorbing layer, each of the pairs including a first semiconductor layer of the first conductivity type containing a first dopant impurity concentration and a second semiconductor layer of the first conductivity type containing a second dopant impurity concentration smaller than the first dopant impurity concentration; and forming a semiconductor light-receiving layer of a second conductivity type on the pairs of layers to form a pn junction with the pairs of layers.

REFERENCES:
patent: 4684969 (1987-08-01), Taguchi
patent: 5075750 (1992-12-01), Kagawa
"Hikari Tsuushin Soshi Kougaku", Optical Communication Device Engineering, H. Yonezu, Feb. 1984, pp. 418-419.

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