Method of making artificial layered high T.sub.c superconductors

Details Method of making artificial layered high T.sub.c superconductors Method of making artificial layered high T.sub.c superconductors

1993-08-16

1995-08-08

Kunemund, Robert

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Using an organometallic intermediate

505473, 117 89, 117105, 117108, C30B 1910, C01F 1100, C01G 100

Patent

active

054398762

ABSTRACT:
A method for making layered structures of artificial high T.sub.c superconductor compounds by which on top of a seed crystal having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

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