Method of making antifuse structures using implantation of both

Details Method of making antifuse structures using implantation of both Method of making antifuse structures using implantation of both

1995-12-29

1998-07-21

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

438467, 438600, H01L 2182

Patent

active

057834679

ABSTRACT:
An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of enhanced amorphous silicon is formed by an ion-implantation of a neutral species and a dopant species into a deposited layer of amorphous silicon, such that the antifuse structure will have a stable conductive link in a programmed state and such that it will be less susceptible to off-state leakage in an unprogrammed state. A method for making an antifuse structure includes forming a lower electrode, depositing an amorphous silicon layer over the lower electrode, ion-implanting a neutral species and a dopant species into the amorphous silicon layer, and forming an upper electrode over the amorphous silicon layer.

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