Method of making antifuse based on silicided single polysilicon

Details Method of making antifuse based on silicided single polysilicon Method of making antifuse based on silicided single polysilicon

1997-03-17

1999-07-06

Chang, Joni

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

438467, 438600, H01L 2182

Patent

active

059207710

ABSTRACT:
An improved antifuse which employs the base-emitter junction of a silicided single polysilicon bipolar transistor. The distance between the base metal and emitter metal is shortened and results from self aligning process steps rather than lithographic steps, resulting in a lower and better controlled programming voltage, programming energy and ON state resistance. Typically the conductive filament formed in the new antifuse is about 0.65 microns long and is formed by a voltage pulse having a relatively slow rise time (e.g. 150 microseconds), resulting in improved properties which provide advantages in circuit design and in manufacturing circuits using the new antifuse.

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W.W. Brockhoff, Electrically Shorted Semiconductor Junctions Utilized as Programmable Read Only Memory Elements, pp. 202-206, date unknown.

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