Method of making and using a high resolution lithographic mask

Details Method of making and using a high resolution lithographic mask Method of making and using a high resolution lithographic mask

1989-06-19

1991-09-17

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430942, 2504921, G03F 900

Patent

active

050494619

ABSTRACT:
A high resolution lithographic mask having a desired pattern is generated and used to replicate the pattern onto a film in a one-step process.
A film of phase-changeable material in one state is provided on a conductive substrate. By scanning tunneling microscope techniques, the state and thereby the conductivity or other property of the material in selected areas of the film is changed to a second state to provide from the film a mask having a desired pattern defined by crystalline areas. Amorphous material need not be removed from the mask.
To replicate the pattern on another film, the latter is placed on another conductive substrate; the mask is positioned with its patterned side within electron tunneling distance of said other film; and the pattern is replicated in a single step by applying a voltage between the mask and other film. The voltage charge on said mask is positive and negative on said other film to cause current to flow in the crystalline areas of said mask and, by electron flow from said film to the mask, eliminate backscattering and insure high resolution.
As the state changes (e.g., from crystalline to amorphous) in the pattern areas of said other film, conductivity in the crystalline areas will progressively decrease and, by causing a corresponding reduction in current flow in the crystalline areas, minimize the risk of undesired broadening of exposed areas of said other film.

REFERENCES:
patent: 4601971 (1986-07-01), Lischke
patent: 4802951 (1989-02-01), Clark et al.
patent: 4916688 (1990-04-01), Foster et al.
M. A. McCord et al., "Lithography with the Scanning Tunneling Microscope", J. Vac. Sci. Tech., B4, 86 (1986), pp. 86-88.
Ringger et al., "Nanometer Lithography with the Scanning Tunneling Microscope", Appl. Phys. Lett., 46, pp. 832-834 (1985).
R. Hrach, "Modelling of Electron Emission from Sandwich Cathodes", Vacuum, vol. 31, No. 7, p. 297 (1981).
S. K. Bahl et al., "Amorphous vs. Crystalline GeTe Films", Journal Appl. Physics, vol. 41, No. 5, pp. 2196-2212 (1970).

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