Method of making and trimming ballast resistors and barrier meta

Details Method of making and trimming ballast resistors and barrier meta Method of making and trimming ballast resistors and barrier meta

1993-05-26

1994-08-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437918, 437190, 437192, 148DIG136, H01L 2170

Patent

active

053366310

ABSTRACT:
A method for fabricating microwave power transistor elements onto a semiconductor body. An oxidizable barrier material is applied onto the wafer that both acts as a barrier to prevent diffusion between the contact metal of the transistor and the silicon and also acts as a ballast resistor. A contact metal layer is then deposited onto the barrier material at selected locations and the excess barrier material is removed. Barrier material is left between the contact metal and the silicon and at the selected ballast resistor locations. The ballast resistors may then be trimmed, increasing the value of the resistors, by oxidizing a thin surface layer of the exposed barrier material at the ballast resistor locations.

REFERENCES:
patent: 4197551 (1980-04-01), Adlerstein
patent: 4374012 (1983-02-01), Adlerstein
patent: 4755480 (1988-07-01), Yau et al.
patent: 5013677 (1991-05-01), Hozumi
patent: 5030588 (1991-07-01), Hosaka
patent: 5068201 (1991-11-01), Spinner, III et al.

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