Method of making and selectively doping isolation trenches utili

Details Method of making and selectively doping isolation trenches utili Method of making and selectively doping isolation trenches utili

1985-07-25

1987-03-31

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29580, 29571, 148 15, 148187, H01L 2178

Patent

active

046531777

ABSTRACT:
It is known to utilize dielectric-filled trenches in a CMOS integrated-circuit device to achieve electrical isolation between adjacent n-channel and p-channel regions. In that way, latchup-free operation of the device is ensured. But inversion effects along the walls of the trenches can cause high leakage currents, undesirably high parasitic capacitances and even shorting together of source/drain regions. In accordance with the invention, a nonlithographic technique including selective anodic oxidation is employed to selectively mask the sidewalls of the trenches. Each sidewall can then be independently doped thereby effectively eliminating the possibility of inversion occurring therealong.

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IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, "Anodic Oxidation of Si in Oxygen/Chlorine Plasma", by N. Haneji, pp. 100-105.
IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980, "Selective Anodic Oxidation of Silicon in Oxygen Plasma" by V. Q. Ho et al, pp. 1436-1443.

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