Method of making an ultra thin dielectric for electronic devices

Details Method of making an ultra thin dielectric for electronic devices Method of making an ultra thin dielectric for electronic devices

1994-05-04

1995-12-26

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437242, 437978, 437983, 437919, H01L 21336, H01L 21318

Patent

active

054787653

ABSTRACT:
High quality, ultra thin (<30 .ANG.) SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29.ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties and reliability.

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