Method of making an SOI transistor

Details Method of making an SOI transistor Method of making an SOI transistor

1997-01-23

1998-07-21

Dutton, Brian

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

H01L 21331

Patent

active

057834725

ABSTRACT:
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

REFERENCES:
patent: 5460982 (1995-10-01), Bertagnolli et al.

Affiliated with

Also associated with

Rating

Method of making an SOI transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an SOI transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an SOI transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1646496