Method of making an oxide isolated, lateral bipolar transistor

Details Method of making an oxide isolated, lateral bipolar transistor Method of making an oxide isolated, lateral bipolar transistor

1990-10-31

1991-12-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437160, 437162, 437164, 437168, 437200, 357 4, 357 237, 357 34, 357 35, 148DIG11, 148DIG1, H01L 27082

Patent

active

050700308

ABSTRACT:
Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a bipolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.

REFERENCES:
patent: 3943555 (1976-03-01), Mueller et al.
patent: 4546536 (1985-10-01), Anantha et al.
patent: 4586968 (1986-05-01), Coella-Vera
patent: 4703554 (1987-11-01), Havemann
patent: 4729965 (1988-03-01), Tamaki et al.
patent: 4769687 (1988-09-01), Nakazato et al.
patent: 4824799 (1989-04-01), Komatsu
patent: 4879585 (1989-11-01), Usami
patent: 4897698 (1990-01-01), Zorinsky et al.
patent: 4897704 (1990-01-01), Sakurai
patent: 4902641 (1990-02-01), Koury, Jr.
patent: 4922315 (1990-03-01), Vu
patent: 4975381 (1990-12-01), Taka et al.

Affiliated with

Also associated with

Rating

Method of making an oxide isolated, lateral bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an oxide isolated, lateral bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an oxide isolated, lateral bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1696777