Method of making an optimized code ion implantation procedure fo

Details Method of making an optimized code ion implantation procedure fo Method of making an optimized code ion implantation procedure fo

1995-03-17

1996-05-07

Fourson, George

Fishing, trapping, and vermin destroying

437 52, 437 56, H01L 21265, H01L 2170, H01L 2700

Patent

active

055146104

ABSTRACT:
A process designed to fabricate depletion mode MOSFET devices, for ROM applications, has been developed. A key feature of this fabrication sequence is the ion implantation step used to create the programmable cell. The code implant step is performed through a polysilicon gate structure, into the underlying channel region. The ability to reproducibly place the desired dopant at the desired channel location, is dependent on the implant conditions as well as the reproducibility of the thicknesses of the layers the implant has to penetrate. This process has been designed to remove some of the variables and thus result in optimized device characteristics.

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