Method of making an optically isolated monolithic light emitting

Details Method of making an optically isolated monolithic light emitting Method of making an optically isolated monolithic light emitting

1979-03-05

1980-04-22

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29580, 148171, 250211J, 313500, 357 17, 357 55, 357 90, H01L 2176, H01L 3300, H01L 2120

Patent

active

041993853

ABSTRACT:
Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded concentrated wafer and selectively removing portions of the opposite side of the wafer adjacent to said p-n junctions in order to permit light of varying colors to escape and to provide optical isolation. Metallurgical pads are provided to each of the p-n junctions for solder reflow type connections.

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patent: 4142196 (1979-02-01), Diguet et al.
Murray et al., "Lighting Up in a Group", Electronics, Mar. 4, 1968, pp. 104-110.
Craford et al., "LED Technology", Solid State Technology, Jan. 1974, pp. 39-46 and 58.

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