Method of making an ohmic electrode using a TiW layer and an Au

Details Method of making an ohmic electrode using a TiW layer and an Au Method of making an ohmic electrode using a TiW layer and an Au

1993-03-01

1995-06-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437246, H01L 2946

Patent

active

054223075

ABSTRACT:
A semiconductor device having a high productivity, a low resistance ohmic electrode, a high integration density, a low deterioration of a characteristic of each component and a high yield is provided. The ohmic contact of the semiconductor device has a structure of an AuGe/Ni alloy layer (27), a WSi layer (18c) and an Au layer (17d) sequentially laminated on a GaAs substrate (1). The flatness of the electrode is maintained by the WSi layer (18c) and the reduction of a resistance of the electrode is attained by the Au layer (17d ).

REFERENCES:
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patent: 5250466 (1993-10-01), Gerner et al.
Notomi et al., "A 45K Hemt Gate Array with 35PS DCFL and 50PS BDCFL Gates", 1991 IEEE Intl. Solid-State Circuits Conference Digest of Technical Papers, 1991, pp. 152-153.

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