Method of making an isolation trench and resulting isolation...

Details Method of making an isolation trench and resulting isolation... Method of making an isolation trench and resulting isolation...

2008-05-20

2008-05-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C438S436000, C257SE21548, C257SE21549, C257SE21579, C257SE21577, C257SE21628

Reexamination Certificate

active

07375004

ABSTRACT:
A method of forming and resulting isolation region, which allows for densification of an oxide layer in the isolation region. One exemplary embodiment of the method includes the steps of forming a first trench, forming an oxide layer on the bottom and sidewalls of the trench, forming nitride spacers on the lined trench, and thereafter etching the silicon beneath the first trench to form a second trench area. An oxide layer is then deposited to fill the second trench. Densificiation of the isolation region is possible because the silicon is covered with nitride, and therefore will not be oxidized. Light etches are then performed to etch the oxide and nitride spacer area in the first trench region. A conventional oxide fill process can then be implemented to complete the isolation region.

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