Method of making an isolation layer stack semiconductor device

Details Method of making an isolation layer stack semiconductor device Method of making an isolation layer stack semiconductor device

1995-10-24

1996-11-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 61, 437 28, 437 26, H01L 21265

Patent

active

055785107

ABSTRACT:
A method of making a semiconductor device includes forming of an element isolation layer stack on a first region of a silicon substrate between adjacent element forming regions and injecting impurity ions upon a surface of the silicon substrate so as to form a diffusion layer. The diffusion layer is formed to include a first portion disposed in a surface of the substrate just beneath the element isolation layer stack and at the same time a second portion disposed in the substrate inside each of the element forming regions at a depth which is at a distance from the surface of the substrate and deeper than the first portion.

REFERENCES:
patent: 4570331 (1986-02-01), Eaton, Jr. et al.
patent: 4818235 (1989-04-01), Chao
patent: 4830977 (1989-05-01), Katto et al.
patent: 4849366 (1989-07-01), Hsu et al.
patent: 4937756 (1990-06-01), Hsu et al.
patent: 4943536 (1990-07-01), Havemann
patent: 5147811 (1992-09-01), Sakagami
patent: 5183768 (1993-02-01), Kameyama et al.
patent: 5260229 (1993-11-01), Hodges et al.
patent: 5270227 (1993-12-01), Kameyama et al.
patent: 5344787 (1994-09-01), Nagalingam et al.
patent: 5350700 (1994-09-01), Yang et al.
Fully Planarized 0.5um Technologies For 16M DRAM, W. Wakaniya et al., IEDM Tech. Dig. pp. 246-249 1988.
A 0.5um Isolation Technology Using advanced Poly Silicon IEDM pp. 100-103 1988.

Affiliated with

Also associated with

Rating

Method of making an isolation layer stack semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an isolation layer stack semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an isolation layer stack semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1972551