Method of making an ion-implanted planar-buried-heterostructure

Details Method of making an ion-implanted planar-buried-heterostructure Method of making an ion-implanted planar-buried-heterostructure

1991-03-28

1992-04-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, 437 22, H01L 2120, H01L 21265

Patent

active

051028255

ABSTRACT:
Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

REFERENCES:
patent: 4716125 (1987-12-01), Makiuchi
patent: 4771010 (1988-09-01), Epler et al.
patent: 4814284 (1989-03-01), Inoue et al.
patent: 4933301 (1990-06-01), Scifres et al.
patent: 4987468 (1991-01-01), Thornton
patent: 4990466 (1991-02-01), Shieh et al.

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