Method of making an ion-implanted bonding connection of a semico

Details Method of making an ion-implanted bonding connection of a semico Method of making an ion-implanted bonding connection of a semico

1988-02-22

1989-08-15

Lacey, David L.

Fishing, trapping, and vermin destroying

437199, 427 38, H01L 21265

Patent

active

048574848

ABSTRACT:
A method for forming a bonding connection in a semiconductor integrated cirucit device includes a step of ion implanting a bonding pad of aluminum with silicon atoms before bonding a bonding wire to the bonding pad. The silicon atoms are introduced into the bonding pad only at its surface and its vicinity, so that the bonding pad is provided with an enhanced humidity-resistant characteristic while maintaining the overall electrical resistance of an interconnection system at a low level.

REFERENCES:
patent: 3328210 (1967-06-01), McCaldin et al.
patent: 3562022 (1971-02-01), Shifrin
patent: 3765970 (1973-10-01), Athanas et al.
patent: 3912546 (1975-10-01), Hunsperger et al.
patent: 4321104 (1982-03-01), Hasegawa et al.
patent: 4534105 (1985-08-01), Reusch
patent: 4622576 (1986-11-01), Buynoski
patent: 4672740 (1987-06-01), Shirari et al.
Kroemer, RCA Technical Notes, "Method of Making Ohmic Contacts to Silicon", PTO Library, 8/9/57.
IBM Technical Disclosure Bulletin, Brodsky, "Semiconductor Contacts", vol. 7, No. 6, Nov. 1964.

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