Method of making an interconnection structure of a semiconductor

Details Method of making an interconnection structure of a semiconductor Method of making an interconnection structure of a semiconductor

1995-06-02

1996-10-01

Thomas, Tom

Fishing, trapping, and vermin destroying

437190, 437981, 437192, 437194, H01L 2144

Patent

active

055610846

ABSTRACT:
A first aluminum interconnection layer includes an aluminum alloy layer 12 and an upper metal layer 13 containing refractory metal. A second aluminum layer 15 is in contact with a surface of upper metal layer 13 through a through-hole 19. A thickness t2 of a contact portion 132 of upper metal layer 13 is smaller than a thickness t1 of a non-contact portion 131. In an interconnection structure for a semiconductor integrated circuit device, the increase in electric resistance by the through-hole is suppressed, and also effects achieved by layer 13 containing refractory metal forming the most upper portion of first aluminum interconnection layer 1A are maintained.

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Wolf, Silicon Processing for the VLSI Era vol. 1 (1986) Lattice Press pp. 546, 558, 579.

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