Method of making an integrated circuit with complementary juncti

Details Method of making an integrated circuit with complementary juncti Method of making an integrated circuit with complementary juncti

1996-03-18

1998-06-02

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

438357, 438358, H01L 218228

Patent

active

057599025

ABSTRACT:
Process for making an integrated-circuit (IC) chip with junction-isolated complementary bipolar transistors, and novel chip made by such process. P-type dopant is implanted and diffused in an N-type substrate to form a sub-collector for a pnp transistor and also is implanted and diffused in the substrate to form a P-well for the sub-collector of an npn transistor. N-type material is then implanted and diffused into the P-well to form the npn sub-collector, and also is implanted in the substrate to form part of an isolation wall for the pnp transistor. A P-type epitaxial (epi) layer is grown over the N-type substrate. N-type material is implanted and diffused in the epi layer to complete the isolation wall for the pnp transistor, and to form the collector for the npn transistor. P-type and N-type material is implanted and diffused in the P-type epi layer to form the bases and emitters for the npn and pnp transistors.

REFERENCES:
patent: 4054899 (1977-10-01), Stehlin et al.
patent: 4058419 (1977-11-01), Tokumaru et al.
R.M. Warner. Jr., & J. N. Fordemwalt, "Integrated Circuits--Design Principles and Fabrication", Motorola Series in Solid-State Electronics, pp. 145-150.
Integrated Silicon Device Technology vol. XI., Bipolar Transistors, Research Triangle Institute Tec. Report ASD-TDR-63-316, vol. XI; Apr. 1966; pp. 218-261, 318.

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