Method of making an integrated circuit vertical electronic grid

Details Method of making an integrated circuit vertical electronic grid Method of making an integrated circuit vertical electronic grid

1995-06-07

1998-02-03

Bradley, P. Austin

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, 445 51, H01J 918, H01J 130

Patent

active

057137749

ABSTRACT:
An integrated circuit electronic grid device includes first and second metal layers wherein the metal layers are vertically disposed within a substitute. A layer of a dielectric medium is disposed between the metal layers and a third metal layer is spaced apart from the second metal layer and insulated from the second metal layer by another layer of a dielectric medium. The first and second metal layers are biased with respect to each other to cause a flow electrons from the first metal layer toward the second metal layer. The second metal layer is provided with a large plurality of holes adapted for permitting the flow of electrons to substantially pass therethrough and to travel toward the third metal layer. A fourth metal layer is spaced apart from the third metal layer to collect the electrons wherein the third metal layer is also provided with a large plurality of holes to permit the electrons to flow therethrough and continue toward the fourth metal layer. The third metal layer is coupled to a lead to permit it to serve as a control grid for modulating the flow of electrons.

REFERENCES:
patent: 5150019 (1992-09-01), Thomas et al.
patent: 5203731 (1993-04-01), Zimmerman
W. J. Orvis et al., "Modelling and Fabricating Micro-Cavity Integrated Vacuum Tubes," IEEE Trans. on Electron Devices, vol. 36, No. 11, Nov. 1989, pp. 2651-2657.
C. A. Spindt et al., "Field-Emitter Arrays for Vacuum Microelectronics," IEEE Trans. on Electron Devices, vol. 38, No. 10, Oct. 1991, pp. 2355-2263 .

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