Method of making an integrated circuit microwave interconnect an

Details Method of making an integrated circuit microwave interconnect an Method of making an integrated circuit microwave interconnect an

1993-11-15

1995-09-26

Hearn, Brian E.

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating of groove or through hole

437203, 437195, 437 51, 437927, 333254, 333260, 427 96, 216 19, B44C 122

Patent

active

054531543

ABSTRACT:
An integrated circuit microwave interconnect is formed upon a surface by disposing a dielectric layer over the surface and patterning the dielectric layer to form a dielectric region. The dielectric region is then surrounded by a surrounding metal layer. In one embodiment the surface may be a non-metal upon which a metal layer is disposed prior to disposing the dielectric layer. In this embodiment an additional metal layer is disposed adjoining the first metal surface on both sides of the dielectric region after patterning the layer to form the dielectric region. Thus, the two metal layers thereby form the surrounding metal layer around the dielectric region. The microwave interconnect may be formed upon the surface of the substrate, above the surface of the substrate in a floating configuration, or in a trench within the substrate. An opening may be provided through the surrounding metal layer and a second dielectric region, in communication with the first dielectric region by way of the opening, may be formed. The second dielectric region is also surrounded by metal to provide a three-dimensional microwave interconnect. The dielectric material within the surrounding metal layers may be removed by an etching process and a vacuum, partial vacuum, or inert gas may be provided within the surrounding metal layers.

REFERENCES:
patent: 3157847 (1964-11-01), Williams
patent: 4455537 (1984-06-01), La Prade et al.
patent: 4657322 (1987-04-01), Grellmann et al.
patent: 4787691 (1988-11-01), Lorenzo et al.
patent: 4789642 (1988-12-01), Lorenzo
patent: 4857973 (1989-08-01), Yang
patent: 4933743 (1990-06-01), Thomas
patent: 4983543 (1991-01-01), Sato et al.
patent: 5349217 (1994-09-01), Boysel
patent: 5378306 (1995-01-01), Cibulsky et al.
"Fields and Waves in Communication Electronics", Second Edition, Ramo, Whinney, and Van Dizer, Wilay, New York 1984, pp. 410-417, 551, 554, 725.

Affiliated with

Also associated with

Rating

Method of making an integrated circuit microwave interconnect an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an integrated circuit microwave interconnect an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an integrated circuit microwave interconnect an will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1550363