Method of making an integrated circuit including structuring...

Details Method of making an integrated circuit including structuring... Method of making an integrated circuit including structuring...

2011-02-15

2011-02-15

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257S532000, C430S296000

Reexamination Certificate

active

07888230

ABSTRACT:
A method of making an integrated circuit including structuring a material. The method includes providing an arrangement of three-dimensional bodies. The material is arranged between the bodies and structured directed radiation. The projection pattern of the three-dimensional bodies is transferred into the material. The structured material connects at least two of the three-dimensional bodies.

REFERENCES:
patent: 6258691 (2001-07-01), Kim
patent: 6534221 (2003-03-01), Lee et al.
patent: 6946341 (2005-09-01), Joo et al.
patent: 7027227 (2006-04-01), Chiba et al.
patent: 7067385 (2006-06-01), Manning
patent: 7125781 (2006-10-01), Manning et al.
patent: 7557015 (2009-07-01), Sandhu et al.
patent: 2002/0086479 (2002-07-01), Reinberg
patent: 2005/0245022 (2005-11-01), Gutsche et al.
patent: 2005/0253179 (2005-11-01), Park
patent: 2006/0252224 (2006-11-01), Basceri et al.
patent: 2006/0263968 (2006-11-01), Manning
patent: 2007/0037349 (2007-02-01), Gutsche et al.
Kim et al., “A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) Capacitor Aiming at sub 70nm DRAMs”, IEDM Tech. Dig., p. 69-72 (2004).

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