Method of making an integrally gated carbon nanotube field...

Details Method of making an integrally gated carbon nanotube field... Method of making an integrally gated carbon nanotube field...

2011-04-05

2011-04-05

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S589000, C438S595000, C438S048000

Reexamination Certificate

active

07919338

ABSTRACT:
A method of making an integrally gated carbon nanotube field ionization device comprising forming a first insulator layer on a first side of a substrate, depositing a conductive gate layer on the first insulator layer, forming a cavity in the substrate by etching a second side of the substrate to near the first insulator layer, wherein the second side is opposite the first side and wherein a portion of the first insulator is over the cavity, etching an aperture in the portion of the first insulator layer and the conductive gate layer to form an aperture sidewall, depositing a second insulator layer removing the second insulator layer from the top surface, depositing a metallization layer over the second insulator layer, depositing a catalyst layer on the metallization layer and growing a carbon nanotube from the catalyst layer.

REFERENCES:
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 6821911 (2004-11-01), Lo et al.
patent: 6830981 (2004-12-01), Lee et al.
patent: 6979947 (2005-12-01), Yaniv et al.
patent: 7233071 (2007-06-01), Furukawa et al.
patent: 2010/0164343 (2010-07-01), Choi et al.

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