Method of making an InP-based device comprising semiconductor gr

Details Method of making an InP-based device comprising semiconductor gr Method of making an InP-based device comprising semiconductor gr

1996-05-22

1997-05-27

Breneman, R. Bruce

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 43, 438 44, 117953, 117108, H01L 2120

Patent

active

056331932

ABSTRACT:
Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art. An exemplary and preferred application of the method is in grating formation and overgrowth in InP-based DFB lasers.

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"Evaluation of the Performance and Operating Characteristics of a Solid Phosphorous Source Valved Cracking Cell for Molecular Beam Epitaxy Growth of III-V Compounds", by J.N. Baillargeon et al., Journal of Vacuum Science and Technology, vol. B 13(1), p. 64 (Jan./Feb. 1995).

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