Method of making an infrared imaging device

Details Method of making an infrared imaging device Method of making an infrared imaging device

1991-06-18

1992-06-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 3, 437 5, 437 90, H01L 2714

Patent

active

051206641

ABSTRACT:
An infrared imaging device includes an infrared detector element having a pin structure which detects infrared rays 8 to 12 macrons in wavelength. The pin structure comprises a multiquantum well structure as an intrinsic layer including a plurality of Al.sub.y Ga.sub.1-y As quantum well layers sandwiched by respective Al.sub.x Ga.sub.1-x As quantum barrier layers (x>y) and a p type Al.sub.x Ga.sub.1-x As layer and an n type Al.sub.x Ga.sub.1-x As layer sandwiching the intrinsic layer. An infrared imaging device includes a plurality of picture units, each picture unit including an infrared detector element and a corresponding GaAs FET having a source region connected with the n layer of the infrared detector element on the same substrate. The picture unit and corresponding FET may be monolithically integrated on the same substrate with an n type channel in the substrate interconnecting the picture unit and the corresponding FET.

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Levine et al., "InGaAs/InAlAs Multiquantum Well Intersubband Absorption At a Wavelength of .lambda.=4.4 .mu.m", Applied Physics Letters, vol. 52, No. 18, 1988, pp. 1481-1483.
Levine et al., "New 10 .mu.m Infrared Detector Using Intersubband Absorption In Resonant Tunneling GaAlAs Superlattices", Applied Physics Letters, vol. 50, No. 16, 1987, pp. 1092-1094.
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