Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-09-20
1997-08-19
Bowers, Jr., Charles L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
438 37, 438 47, H01L 2120
Patent
active
056588259
ABSTRACT:
InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.
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Bowers Jr. Charles L.
Northwestern University
Paladugu Ramamohan Rao
LandOfFree
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