Method of making an improved group III-V semiconductor device ut

Details Method of making an improved group III-V semiconductor device ut Method of making an improved group III-V semiconductor device ut

1982-08-13

1986-03-25

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29569L, 148DIG25, 148DIG60, 148DIG72, 148DIG169, 156610, 156612, 156DIG61, 156DIG81, 156DIG103, 156DIG66, 357 16, 372 46, H01L 21203, H01L 21363

Patent

active

045781273

ABSTRACT:
Single GaAs quantum well or single GaAs active layer or single reverse interface structures with Al.sub.x Ga.sub.1-x As barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.

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T. J. Drummond et al., "Dependence of Electron Mobility on Spatial Separation of Electrons and Donors in Al.sub.x Ga.sub.1-x As/GaAs Heterostructures," Journal of Applied Physics, vol. 52, No. 3, Mar. 1981, pp. 1380-1386.
G. Bastard, "Hydrogenic Impurity States in a Quantum Well: A Simple Model," Physical Review B, vol. 24, No. 8, Oct. 15, 1981, pp. 4714-4722.
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