Metal treatment – Compositions – Heat treating
Patent
1979-10-09
1980-10-28
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
29576B, 29580, 148175, 156649, 156657, 156662, 357 4, 357 13, 357 89, 357 91, H01L 21265, H01L 2120, H01L 21306, H01L 21324
Patent
active
042305055
ABSTRACT:
A method of making an Impatt diode capable of operating at millimeter wave frequencies in which an epitaxial layer of the thickness desired for the diode is deposited on a substrate. Conductivity modifiers are implanted into the epitaxial layer to form one active region and a high conductivity region between the one active region and the surface of the epitaxial layer. A heat sink which also serves as a handle is formed on the epitaxial layer. The substrate is removed and conductivity modifiers are implanted into the other side of the epitaxial layer to the other active region and a high conductivity region between the other active region and the other surface of the epitaxial layer. After the implants the epitaxial layer is annealed. After the first implants the epitaxial layer may be annealed by either thermal or laser annealing. However, after the second implants the epitaxial layer must be laser annealed.
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Seidel et al., "Double-Drift-Region Ion-Implanted . . . Impatt Diode", Proc. IEEE, vol. 59, No. 8, Aug. 1971, pp. 1222-1228.
Hammerschmitt, J., "Silicon Snap-Off . . . Impatt Diode . . . ", Siemens Review, vol. 42, No. 1, Jan. 1975, pp. 44-47.
Ino et al., "Submillimeter Wave Si . . . Impatt Diodes", Jap. J. Applied Phys., vol. 16, 1977, pp. 89-92.
Rosen Arye
Wu Chung P.
Cohen Donald S.
Morris Birgit E.
RCA Corporation
Rutledge L. Dewayne
Saba W. G.
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