Method of making an EPROM with peripheral transistor

Fishing – trapping – and vermin destroying

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H01L 218247

Patent

active

056041420

ABSTRACT:
This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

REFERENCES:
patent: 4766088 (1988-08-01), Kono et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 5340760 (1994-08-01), Komori et al.
patent: 5352620 (1994-10-01), Komori et al.

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