Method of making an EPROM memory cell

Details Method of making an EPROM memory cell Method of making an EPROM memory cell

1987-08-20

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 44, 437 48, 437 50, 437 49, 437 51, 437 52, 437 61, 437 69, 437191, 437195, 437228, H01L 21225, H01L 2126

Patent

active

048493694

ABSTRACT:
An a MIS integrated circuit, such as an EPROM memory cell integrated onto a semiconductor substrate comprises (a) memory points which are insulated from one another and have in each case a stack of materials formed from a first insulant in contact with the substrate, first and second gates separated from one another by a second insulant, the first gate being in contact with the first insulant, a source and a drain formed in the substrate on either side of the stack of gates, and a channel, whose length is oriented according to a first direction Y, (b) first metal lines parallel to the first direction for applying electric signals to said stacks and (c) second conductor lines parallel to a second direction X perpendicular to the first direction and produced on the drains for applying electric signals to said drains. A process for making the circuit is also disclosed.

REFERENCES:
patent: 3893152 (1975-07-01), Lin
patent: 4151021 (1979-04-01), McElroy
patent: 4258466 (1981-03-01), Kuo et al.

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