Method of making an EPROM cell with a readily scalable interpoly

Details Method of making an EPROM cell with a readily scalable interpoly Method of making an EPROM cell with a readily scalable interpoly

1993-05-26

1995-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437241, 148DIG114, H01L 21265

Patent

active

054222915

ABSTRACT:
The use of an O--N--RTN (Oxide-Nitride-Rapid Thermal Nitrided Polysilicon) interpoly dielectric multilayer instead of a customary O--N--O (Oxide-Nitride-Oxide) multilayer in the floating gate structure of a progammable, read-only memory cell has beneficial effects on the performance of the cell and facilitates its scaling.

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Extended Abstracts, vol. 86-2, 24 Oct. 1986, p. 565.
N. S. Alvi et al., "Thin Oxide/Nitride-Oxide Films on Polysilicon Grown by Rapid Transient Processing".
Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Aug. 27, 1987, pp. 211-214.
N. Ajika et al., "Formation of Inter-Poly Si Dielectrics by Rapid Thermal Processing".
Ajika et al., "Enhanced Reliability of Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided Polysilicon", 1989 VLSI Symposium, Technology Digest, pp. 63-64.

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