Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1971-01-08
1977-02-08
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
156610, 156613, 252 623GA, H01L 21205, H01L 2118
Patent
active
040070743
ABSTRACT:
A layer of GaAs.sub.1-x P.sub.x (0<x<1) is epitaxially grown on GaAs which is disposed in a reaction tube at a different location from the Ga source by maintaining the GaAs at a temperature range of from about 750.degree. C. to about 850.degree. C., maintaining the Ga source at a temperature higher than that of the GaAs, introducing As.sub.4 gas, PCl.sub.3 gas and H.sub.2 gas or AsCl.sub.3 gas, P.sub.4 gas and H.sub.2 gas into the reaction tube from the Ga source side, whereby said gases react with the Ga source and produce GaCl gas, and contacting said gases including the GaCl gas with the surface of the GaAs.
REFERENCES:
patent: 3146137 (1964-08-01), Williams
patent: 3218205 (1965-11-01), Ruehrwein
patent: 3312570 (1967-04-01), Ruehrwein
patent: 3322575 (1967-05-01), Ruehrwein
patent: 3421952 (1969-01-01), Conrad et al.
patent: 3441000 (1969-04-01), Burd et al.
patent: 3462323 (1969-08-01), Groves
patent: 3471324 (1969-10-01), Wilson et al.
Weinstein, et al., "Prep. and Properties of GaAs-GaP--Heterojunctions".
Ibid vol. 111, No. 6, June 1964, pp. 674-682.
Tietjen et al., "All-in-one Process for Building Junctions", Electronics, Nov. 13, 1967, pp. 113-115.
Shaw et al., "Gallium Arsenide Epitaxial Technology", 1966, Symposium on GaAs, Reading, Sept. 1966, pp. 10-15.
Eddolls et al., "Prep. and Properties of Epitaxial Gallium Arsenide".
Ibid, pp. 3-9.
Finch et al., "Preparation of GaAs.sub.x P.sub.1-x by Vapor Phase Reaction", J. Electrochem. Soc., vol. 111, No. 7, July 1964, pp. 814-817.
Ing et al., "Open Tube Epitaxial Synthesis of GaAs and GaP",
Ibid, vol. 109, No. 10, Oct. 1962, pp. 995-997.
Effer, D., "Epitaxial Growth of Doped and Pure GaAs--System".
Ibid, vol., 112, No. 10, Oct. 1965, pp. 1020-1025.
Tietjen et al., "Prep. and Properties of Vapor-Deposited--Phosphine".
Ibid, vol. 113, No. 7, July 1966, pp. 724-728.
Kusumoto Hajime
Ogirima Masahiko
Ono Yuichi
Shinoda Toshimitu
Hitachi , Ltd.
Rutledge L. Dewayne
Saba W. G.
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