Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-09-19
2006-09-19
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S024000
Reexamination Certificate
active
07109517
ABSTRACT:
Subwavelength random and periodic microscopic structures are used to enhance light absorption and tolerance for ionizing radiation damage of thin film and photodetectors. Diffractive front surface microscopic structures scatter light into oblique propagating higher diffraction orders that are effectively trapped within the volume of the photovoltaic material. For subwavelength periodic microscopic structures etched through the majority of the material, enhanced absorption is due to waveguide effect perpendicular to the surface thereof. Enhanced radiation tolerance of the structures of the present invention is due to closely spaced, vertical sidewall junctions that capture a majority of deeply generated electron-hole pairs before they are lost to recombination. The separation of these vertical sidewall junctions is much smaller than the minority carrier diffusion lengths even after radiation-induced degradation. The effective light trapping of the structures of the invention compensates for the significant removal of photovoltaic material and substantially reduces the weight thereof for space applications.
REFERENCES:
patent: 3969746 (1976-07-01), Kendall et al.
patent: 4516314 (1985-05-01), Sater
patent: 5067985 (1991-11-01), Carver et al.
patent: 5268039 (1993-12-01), Vogeli et al.
patent: 6132585 (2000-10-01), Midorikawa et al.
Iles, P.A., “Future Use of Silicon Solar Cells in Extraterrestrial Applications,”Progress in Photovoltaics: Research and Applications, vol. 2, John Wiley & Sons, Ltd., 1994, pp. 95-106.
Sharps, P.R., Timmons, M.L., Venkatasubramanian, R., Pickett, R., Hills, J.S., Hancock, J., Hutchby, J., Iles, P., Chu, C.L., Wanlass, M., Ward, J.S., “Development of 20% Efficient GalnAsP Solar Cells,”IEEE PVSC 23, 1993, pp. 633-638.
Iles, P.A., “Future of Photovoltaics for Space Applications,”Progress in Photovoltaics: Research and Applications, vol. 8, John Wiley & Sons, Ltd., 2000, pp. 39-51.
Tringe, J., Merrill, J., Reinhardt, K., “Developments in Thin-Film Photovoltaics for Space,”IEEE PVSC 28, pp. 1242-1245.
Yamaguchi, M., Taylor, S.J., “Mechanism for the Anomalous Degradation of Si Solar Cells Induced by High Influence 1 MeV Electron Irradiation,”Appl. Phys. Lett., vol. 68.22, American Institute of Physics, May 27, 1996, pp. 3141-3143.
Prat, L., Alcubilla, R., Blasco, E., Garcia, E., Calderer, J., Correig, X., “Spectral Response Degradation of Bifacial Silicon Solar Cells,”Solar Cells, vol. 31, Elsevier Sequoia, Netherlands, 1991, pp. 47-56.
Suzuki, A., Kaneiwa, M., Saga, T., Matsuda, S., “Progress and Future View of Silicon Space Solar Cells in Japan,”IEEE Transactions on Electron Devices, vol. 46.10, IEEE, Oct. 1999, pp. 2126-2132.
Hovel, H.J.,Semiconductors and Semimetals: Solar Cells, vol. 11, Academic Press, New York, 1975.
Green, M.A., Keevers, M.J., “Short Communication: Optical Properties of Intrinsic Silicon at 300 K,”Progress in Photovoltaics: Research and Applications, vol. 3, John Wiley & Sons, Ltd, 1995, pp. 189-192.
Campbell, P., Green, M.A., “Light Trapping Properties of Pyramidally Textured Surfaces,”J. Appl. Phys., vol. 62.1, American Institute of Physics, Jul. 1, 1987, pp. 243-249.
Zaidi, S.H., Ruby, D.S., Gee, J.M., “Characterization of Random Reactive Ion Etched-Textured Silicon Solar Cells,”IEEE Transactions on Electron Devices, vol. 48.6, IEEE, Jun. 2001, pp. 1200-1206.
Gaylord, T.K., Baird, W.E., Moharam, M.G., “Zero-Reflectivity High Spatial-Frequency Rectangular-Groove Dielectric Surface-Relief Gratings,”Applied Optics, vol. 25.24, Optical Society of America, Dec. 15, 1986, pp. 4562-4567.
Raguin, D.H., Morris, G.M., “Antireflection Structured Surfaces for the Infrared Spectral Region,”Applied Optics, vol. 32.7, Mar. 1, 1993, pp. 1154-1167.
Sheng, P., Bloch, A.N., Stepleman, R.S., “Wavelength-Selective Absorption Enhancement in Thin-Film Solar Cells,”Appl. Phys. Lett., vol. 43.6, American Institute of Physics, Sep. 15, 1983, pp. 579-581.
Heine, C., Morf, R.H., “Submicrometer Gratings for Solar Energy Applications,”Applied Optics, vol. 34.14, May 10, 1995, pp. 2476-2482.
Zaidi, S.H., Chu, A.-S., Brueck, S.R.J., “Optical Properties of Nanoscale, One-Dimensional Silicon Grating Structures,”J. Appl. Phys., vol. 80.12, American Institute of Physics, Dec. 15, 1996, pp. 6997-7008.
Zaidi, S.H., Gee, J.M., Ruby, D.S., “Diffraction Grating Structures in Solar Cells,”IEEE PVSC, 2000, pp. 395-398.
Wohigemuth, J., Scheinine, A., “New Developments in Vertical Junction Silicon Solar Cells,” IEEE Photovoltaic Specialists Conference, 1980, 151-155.
Presting, H., Konle, J., Behammer, D., Gruhle, A., Uebele, P., Strobl, G., “Fabrication of Si Trench Solar Cells with Improved Radiation Hardness for Space Applications,” 28thIEEE PVSC, session 4P2.LN1, 2000.
Yablonovitch, E., “Statistical Ray Optics,”J. Opt. Soc. Am., vol. 72.7, Optical Society of America, Jul. 1982, pp. 899-907.
Deckman, H.W., Wronski, C.R., Witzke, H., Yablonovitch, E., “Optically Enhanced Amorphous Silicon Solar Cells,”Appl. Phys. Lett., vol. 42.11, American Institute of Physics, Jun. 1, 1983, pp. 968-670.
Fahrenbruch, A.L., Bube, R.H.,Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion, Academic Press, New York, 1983.
Malag, A., “Simple Interference Method of Diffraction Grating Generation for Integrated Optics by the Use of a Fresnel Mirror,”Optics Communications, vol. 32.1, Jan. 1980, pp. 54-58.
Zaidi, S.H., Brueck, S.R.J., “High Aspect-Ratio Holographic Photoresist Gratings,”Applied Optics, vol. 27.14, Optical Society of America, Jul. 15, 1988, pp. 2999-3002.
Kopalidis, P.M., Jorne, J., “Langmuir Probe Measurements and Characterization of Silicon Etching in SF6/O2Discharges,”J. Electrochem. Soc., vol. 139.3, The Electrochemical Society, Inc., Mar. 1992, pp. 839-844.
Bean, K.E., “Anisotropic Etching of Silicon,”IEEE Transactions on Electron Devices, vol. ED-25.10, IEEE, Oct. 1978, pp. 1185-1192.
Turner, D.R., “Electropolishing Silicon in Hydrofluoric Acid Solutions,”Journal of the Electrochemical Society, vol. 105, Jul. 1958, pp. 402-408.
Ottow, S., Lehmann, V., Foll, H., “Processing of Three-Dimensional Microstructures Using Macroporous n-type Silicon,”J. Electrochem. Soc., vol. 143.1, The Electrochemical Society, Inc., Jan. 1996, pp. 385-390.
Ohji, H., French, P.J., Tsutsumi, K., “Fabrication of Mechanical Structures in p-type Silicon Using Electrochemical Etching,”Sensors and Actuators, vol. 82, Elsevier Science S.A., 2000, 254-258.
Wehrspohn, R.B., Chazalviel, J.-N., Ozanam, F., “Macropore Formation in Highly Resistive p-type Crystalline Silicon,”J. Electrochem Soc., vol. 145.8, The Electrochemical Society, Inc., Aug. 1988, pp. 2958-2961.
Zaidi, S.H., Marquadt, R., Minhas, B., Tringe, J.W., “Deeply Etched Gratings Structures for Enhanced Absorption in Thin C-Si Solar Cells,”IEEE PVSC 29, 2002, pp. 1290-1293.
Pang, S.W., Rathman, D.D., Silversmith, D.J., Mountain, R.W., DeGraff, P.D., “Damage Induced in Si by Ion Milling or Reactive Ion Etching,”J. Appl. Phys., vol. 54.6, American Institute of Physics, Jun. 1983, pp. 3272-3277.
Ruby, D.S., Zaidi, S.H., Narayanan, S., “Plasma-Texturization for Multicrystalline Silicon Solar Cells,”28thIEEE PVSC, 2000, pp. 75-78.
Ibbotson, D.E., Mucha, J.A., Flamm, D.L., Cook, J.M., “Plasmaless Dry Etching of Silicon with Fluorine-Containing Compounds,”J. Appl. Phys., vol. 56.10, Nov. 15, 1984, pp. 2939-2942.
Douglas, E.C., D'Aiello, R.V., “A Study of the Factors Which Control the Efficiency of Ion-Implanted Silicon Solar Cells,”IEEE Transactions on Electron Devices, vol. ED-27.4, IEEE, Apr. 1980, pp. 792-801.
Williams, J.S., Poate, J.M., editors,Ion Implantation and Be
Abraham Fetsum
Cochran Freund & Young LLP
Freund Samuel M.
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