Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2006-07-11
2006-07-11
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
C438S239000, C438S393000
Reexamination Certificate
active
07074688
ABSTRACT:
The present invention provides a method of making an electrochemical capacitor electrode comprising a collector and an electronically conductive porous layer formed on the collector while keeping an electric contact therewith. The porous layer contains at least a porous particle made of a carbon material having an electronic conductivity and a binder capable of binding the porous particle. The method comprises a plasma processing step of subjecting a material to high-frequency thermal plasma processing in a plasma gas atmosphere so as to yield the porous particle. All the manufacturing steps subsequent to the plasma processing step are carried out in an inert gas atmosphere.
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patent: 2002/0164429 (2002-11-01), Gaillard et al.
patent: 2004/0072075 (2004-04-01), Tsukamoto et al.
patent: 10-092432 (1998-04-01), None
patent: 2000-223121 (2000-08-01), None
Kurihara Masato
Maruyama Satoshi
Picardat Kevin M.
TDK Corporation
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