Method of making an article comprising a periodic heteroepitaxia

Details Method of making an article comprising a periodic heteroepitaxia Method of making an article comprising a periodic heteroepitaxia

1992-04-16

1993-05-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437128, 437247, H01L 21203

Patent

active

052139956

ABSTRACT:
A novel method of making articles that comprise a periodic heteroepitaxial semiconductor structure is disclosed. The method pertains to growth of the periodic structure by MBE, CVD or similar growth techniques, and involves periodically changing the substrate temperature. For instance, a periodic multilayer GaAs/AlGaAs is grown by MBE, with the substrate temperature cycled between 600.degree. C. and 700.degree. C. The novel method can produce multilayer structures of uniformly high material quality.

REFERENCES:
patent: 4900372 (1990-02-01), Lee et al.
patent: 5079616 (1992-01-01), Yacobi et al.
"A Simple Way to Reduce Series Resistance in P-Doped Semiconductor Distributed Bragg Reflectors", by Hong et al., Journal of Crystal Growth, vol. 111 (1991), pp. 1071-1075.
"MBE Growth and Characteristics of Periodic Index Separate Confinement Heterostructure InGaAs Quantum-Well Lasers", by M. Hong et al., Journal of Electronic Materials, vol. 21, No. 2, 1992, pp. 181-185.

Affiliated with

Also associated with

Rating

Method of making an article comprising a periodic heteroepitaxia does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an article comprising a periodic heteroepitaxia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an article comprising a periodic heteroepitaxia will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-897077