Method of making an article comprising a III/V semiconductor dev

Details Method of making an article comprising a III/V semiconductor dev Method of making an article comprising a III/V semiconductor dev

1989-08-24

1990-12-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG24, 148DIG97, 148DIG169, 156611, 437107, 437939, H01L 21203

Patent

active

049771035

ABSTRACT:
The presence of oval defects on MBE-grown compound semiconductor (e.g., GaAs, InP, or InGaAs) epitaxial layers has proven to be a serious obstacle to the use of such material for the manufacture of integrated circuits (ICs), even though the use of such material potentially could result in ICs having superior performance. One particularly prevalent type of oval defect is generally referred to as .alpha.-type. It has now been discovered that compound semiconductor epitaxial layers that are essentially free of .alpha.-type oval defects can be grown by MBE if first at least a portion of the Ga and/or In metal crucible is coated with an appropriate second metal. The second metal is chosen from the group of metals that are wetted by the first metal and that are less electronegative than the first metal. Aluminum is a currently preferred second metal. Advantageously the interior of the (typically pBN) crucible is Al-coated at least at and near the orifice of the crucible, whereby formation of drops of first metal is prevented.

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