Method of making an article comprising a buried SiO.sub.2 layer

Details Method of making an article comprising a buried SiO.sub.2 layer Method of making an article comprising a buried SiO.sub.2 layer

1986-11-26

1988-06-07

Roy, Upendra

Fishing, trapping, and vermin destroying

357 91, 437 21, 437 29, 437 83, 437 84, H01L 21265, H01L 2120

Patent

active

047496606

ABSTRACT:
We have discovered that high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature <350.degree. C.) into a (100) Si wafer, a low temperature (500.degree.-700.degree. C.) anneal, a high temperature (>1200.degree. C.) anneal, a randomizing implant (.about.5.times.10.sup.14 Si/cm.sup.2, nominal wafer temperature <100.degree. C.), and a low temperature anneal (nominal wafer temperature between 500.degree. and 700.degree. C.). The resulting buried SiO.sub.2 layer typically is relatively thin (e.g., 60 nm), stoichiometric, continuous, and essentially free of Si inclusions, and the Si overlayer typically is of device quality and essentially free of twins, with .chi.min.about.3%.

REFERENCES:
patent: 4385937 (1983-05-01), Ohmura
patent: 4412868 (1983-11-01), Brown et al.
patent: 4523213 (1985-06-01), Konaka et al.
patent: 4588447 (1986-05-01), Golecki
patent: 4676841 (1987-06-01), Celler
Tuppen et al, Thin Solid Films, 131 (1985) 233.
Holland et al, Jour. Non. Crystalline Solids, 71 (1985) 163.
Arienzo et al, IBM. TD13, 27 (1984) 2371.
Yoshii et al, Jap. Jour. Appl. Phys. 21 (1982), Suppl. 21-1, p. 175.
Materials Research Society Symposia Proceedings, vol. 53, "Silicon on Insulator Formed by O.sup.+ or N.sup.+ Ion Implantation" by P. L. F. Hemment, pp. 207-221 (1986).
Appl. Phys. Lett. 48(21), "SiO.sub.2 Buried Layer Formation by Subcritical Dose Oxygen Ion Implantation" by J. Stoemenos et al, pp. 1470-1472, May 26, 1986.
Integrated Circuit Fabrication Technology, by David J. Elliott, McGraw-Hill (1982).
Appl. Phys. Lett. 39(2), "A Novel Three-Step Process for Low-Defect-Density Silicon on Sapphire", by J. Amano et al, pp. 163-165, Jul. 15, 1981.

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