Method of making an antifuse structure using a metal cap layer

Details Method of making an antifuse structure using a metal cap layer Method of making an antifuse structure using a metal cap layer

1995-11-01

1998-06-02

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

438467, 438600, 438DIG901, H01L 2182

Patent

active

057598762

ABSTRACT:
An antifuse includes a metal cap layer located at the second barrier layer of the antifuse to improve the antifuse yield and long term reliability. An antifuse further includes one or more interfacial oxide film layers surrounding an antifuse dielectric layer to provide narrowing of the antifuse programming voltage distribution and to further improve the antifuse yield and long term reliability.

REFERENCES:
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5181096 (1993-01-01), Forouhi
patent: 5210598 (1993-05-01), Nakazaki et al.
patent: 5248632 (1993-09-01), Tung et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5290734 (1994-03-01), Boardman et al.
patent: 5300456 (1994-04-01), Tigelaar et al.
patent: 5308795 (1994-05-01), Hawley et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5353264 (1994-10-01), Tsang et al.
patent: 5362676 (1994-11-01), Gordon et al.
patent: 5374832 (1994-12-01), Tung et al.
patent: 5427979 (1995-06-01), Chang
patent: 5463244 (1995-10-01), De Araujo et al.
patent: 5469379 (1995-11-01), Levy
patent: 5475253 (1995-12-01), Look et al.
patent: 5493146 (1996-02-01), Pramanik et al.
patent: 5557137 (1996-09-01), Cohen
patent: 5565703 (1996-10-01), Chang
patent: 5572458 (1996-11-01), Smith et al.
patent: 5658819 (1997-08-01), Humphrey et al.
V. Jain et al, "Amorphous Silicon Anti-Fuse for High Speed FPGA Application", Conference Proceedings, 5th Annual IEEE Intl. ASIC Conference, pp. 111-113, 1992.

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