Method of making an amorphous silicon dioxide free of metal ions

Details Method of making an amorphous silicon dioxide free of metal ions Method of making an amorphous silicon dioxide free of metal ions

1977-06-17

1978-09-26

Arnold, Donald J.

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

51308, C01B 3312, C01B 3318

Patent

active

041170938

ABSTRACT:
Amorphous silicon dioxide particles for polishing semiconductor surfaces are prepared by boiling, at reflux, a mixture of surplus organic amine, a hydroxybenzene, water and silicon in the presence of oxygen to precipitate silicon dioxide.

REFERENCES:
patent: 2744001 (1956-05-01), Harman et al.
patent: 2865782 (1958-12-01), Strassburg
patent: 3208823 (1965-09-01), Baker et al.
patent: 3715842 (1973-02-01), Treddinick et al.
patent: 3922393 (1975-11-01), Sears

Affiliated with

Also associated with

Rating

Method of making an amorphous silicon dioxide free of metal ions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an amorphous silicon dioxide free of metal ions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an amorphous silicon dioxide free of metal ions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2090009