Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1996-12-20
2000-02-22
Wilczewski, Mary
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438210, 438237, 438 91, H01L 2118, H01L 21329, H01L 21336, H01L 2714
Patent
active
060279559
ABSTRACT:
The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.
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Guidash Robert M.
Lee Paul P.
Lee Teh-Hsuang
Stevens Eric Gordon
Eastman Kodak Company
Leimbach James D.
Wilczewski Mary
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