Method of making an active matrix display incorporating an impro

Details Method of making an active matrix display incorporating an impro Method of making an active matrix display incorporating an impro

1996-03-27

1998-03-24

Tsai, Jey

Fishing, trapping, and vermin destroying

437192, 437194, 257 59, H01L 2184, H01L 21265

Patent

active

057312168

ABSTRACT:
Improved multilayer matrix line including inverted gate thin film matrix transistors to reduce defects in and enhance performance of matrix devices incorporating the transistors, including active matrix displays. The inverted gate line is formed in a multilayer metal structure deposited sequentially before patterning of a first bottom refractory layer, an aluminum layer and a second refractory layer for the gate structure. The aluminum layer is anodized adjacent the gate to prevent step coverage problems. A further improvement is provided when forming an active matrix display storage capacitor utilizing the multilayer gate structure.

REFERENCES:
patent: 5240868 (1993-08-01), Bae et al
patent: 5340758 (1994-08-01), Wei et al.
patent: 5498573 (1996-03-01), Whetten et al.

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