Method of making amorphous alloys for semiconductor device

Details Method of making amorphous alloys for semiconductor device Method of making amorphous alloys for semiconductor device

2006-06-27

2006-06-27

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S073000

Reexamination Certificate

active

07067331

ABSTRACT:
An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.

REFERENCES:
patent: 5285339 (1994-02-01), Chen et al.
patent: 5673162 (1997-09-01), Saito
patent: 5691865 (1997-11-01), Johnson et al.
patent: 5768181 (1998-06-01), Zhu et al.
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 5955211 (1999-09-01), Maeda et al.
patent: 5966012 (1999-10-01), Parkin
patent: 6054226 (2000-04-01), Takeda et al.
patent: 6198610 (2001-03-01), Kawawake et al.
patent: 6205052 (2001-03-01), Slaught et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6249406 (2001-06-01), Gill et al.
patent: 6292389 (2001-09-01), Chen et al.
patent: 6317299 (2001-11-01), Pinarbasi
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6449133 (2002-09-01), Makino et al.
patent: 6487110 (2002-11-01), Nishimura et al.
patent: 6556473 (2003-04-01), Saito et al.
patent: 6567246 (2003-05-01), Sakakima et al.
patent: 2002/0044398 (2002-04-01), Amano et al.
patent: 2002/0097540 (2002-07-01), Hayashi et al.
patent: 02-288209 (1990-11-01), None
patent: 2001-068760 (2001-03-01), None
Jimbo et al., “Giant magnetoresistance effect and electric conduction in amorphous—CoFeB/Cu/Co sandwiches,” J. Appl. Phys., 78(8), Apr. 15, 1996, pp. 6237-6239.
Tsunashima et al., “Induced anisotropy and permeability in amorphous Fe-B and Co-Fe-B Films,” IEEE Transactions on Magnetics, vol. MAG-17, No. 6, Nov. 1981, pp. 3073-3075.

Affiliated with

Also associated with

Rating

Method of making amorphous alloys for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making amorphous alloys for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making amorphous alloys for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3624123