Plastic article or earthenware shaping or treating: apparatus – Female mold – pallet handling means and means to charge... – Pallet supported within mold sidewalls by vertically movable...
Patent
1999-02-24
2000-06-06
Beck, Shrive
Plastic article or earthenware shaping or treating: apparatus
Female mold, pallet handling means and means to charge...
Pallet supported within mold sidewalls by vertically movable...
42725511, 117104, 117105, C23C 1618
Patent
active
060711094
ABSTRACT:
A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.
REFERENCES:
patent: 4159354 (1979-06-01), Milnes et al.
patent: 4620206 (1986-10-01), Ohta et al.
patent: 4698652 (1987-10-01), Umemoto et al.
patent: 5275966 (1994-01-01), Gedridge, Jr.
patent: 5492860 (1996-02-01), Ohkubo et al.
patent: 5772757 (1998-06-01), Saito
Biefeld, R.M., Allerman, A.A., and Baucom, K.C., "The Growth of AllnSb by Metal-Organic Chemical Vapor Deposition," J. of Electronic Materials, 1998, 27, L43-L46.
Biefeld, R.M., Allerman, A.A., and Pelczynski, M.W., "Growth of n-and p-type Al(As)Sb by Metalorganic Chemical Vapor Deposition," Appl. Phys. Letters, 1996, 68(7), 932-934.
Biefeld, R. M., Hills, C. R., and Lee, S. R., "Strain Relief in Compositionally Graded InAs.sub.x Sb.sub.1-x Buffer Layers and InAs.sub.x Sb.sub.1-x InSb Strained-layer Superlattices Grown by MOCVD," J. of Crystal Growth, 1988, 91, 515-526.
Brieland, W.G., and Evans, G.H., "Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor," J. Electrochem. Soc., 1991, 138(6), 1806-1816.
Jones, A.C., "Metalorganic Precursors for Vapour Phase Epitaxy," J. of Crystal Growth, 1993, 129, 728-773.
Leroux, M., Tromson-Carli, A., Bigard, P., and Verie, C., "Growth of AlSb on Insulating Substrates by Metal Organics Chemical Vapour Deposition," 1980, 48, 367-378.
Saker, M.K., Whittaker, D.M., Skolnick, M.S., McConville, C.F., Whitehouse, C.R., Barnett, S.J. Pitt, A.D., Cullis, A.G., and Williams, G.M., "Demonstration of Quantum Confinement in InSb-In.sub.1-x Al.sub.x Sb Multiquantum Wells Using Photoluminescence Spectroscopy," Appl Phys. Letters, 1994, 65(9), 1118-1120.
Wang, C.A., Finn, M.C., Salim, S., Jensen, K.F., Jones, A.C., "Tritertiarybutylaluminum as an Organometallic Source for Epitaxial Growth of AlGaSb," Appl. Phys. Letters, 1995, 67(10), 1384-1386.
Whitehouse, C.R., McConville, C.F., Williams, G.M., Cullis, A.G., Barnett, S.J., Saker, M.K., Skolnick, M.S., and Pitt, A.D., "MBE Growth of Strained-Layer InSb/InAlSb Structures," 1990, Mat. Res. Soc. Symp. Proc., 198, 283-288.
Allerman Andrew A.
Baucom Kevin C.
Biefeld Robert M.
Beck Shrive
Chen Bret
Klavetter Elmer A.
Sandia Corporation
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