Static information storage and retrieval – Interconnection arrangements – Negative resistance
Reexamination Certificate
2007-08-07
2007-08-07
Te, Vu A. (Department: 2824)
Static information storage and retrieval
Interconnection arrangements
Negative resistance
C365S148000
Reexamination Certificate
active
10979469
ABSTRACT:
A method of controlling a negative differential resistance (NDR) element is disclosed, which includes altering various NDR characteristics during operation to effectuate different NDR modes. By changing biasing conditions applied to the NDR element (such as a silicon based NDR FET) a peak-to-valley ratio (PVR) (or some other characteristic) can be modified dynamically to accommodate a desired operational change in a circuit that uses the NDR element. In a memory or logic application, for example, a valley current can be reduced during quiescent periods to reduce operating power. Thus an adaptive NDR element can be utilized advantageously within a conventional semiconductor circuit.
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Bever Hoffman & Harms LLP
Harms Jeanette S.
Synopsys Inc.
Te Vu A.
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