Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1980-11-13
1982-09-14
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29578, 29589, 357 13, 357 14, 357 89, H01L 21205
Patent
active
043493947
ABSTRACT:
A method of making a Zener diode having a Zener voltage in the range of 2.4-3.3 volts. The PN junction is preferably formed by selective epitaxial deposition of P-type silicon on a previously oxidized N-type silicon wafer in an opened region where the oxide has been etched away. The N-type wafer may be a uniform silicon wafer with resistivity in the range of 0.004 to 0.006 .OMEGA.-cm or a low resistivity N-type wafer having a 5-20 .mu.m thick N-type silicon epitaxial layer with a resistivity in a range of 0.004-0.006 .OMEGA.-cm. The selectively deposited P-type layer may have a resistivity of 0.001-0.003 .OMEGA.-cm and a thickness of 1.5-3.0 .mu.m. The P-type layer is grown in a gas phase epitaxial reactor by etching the N-type wafer at a first temperature and then depositing heavily-doped silicon at a second, lower temperature.
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Rutledge L. Dewayne
Saba W. G.
Siemens Corporation
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