Method of making a wiring layer wherein the masking material is

Details Method of making a wiring layer wherein the masking material is Method of making a wiring layer wherein the masking material is

1993-03-16

1995-09-19

Breneman, R. Bruce

Etching a substrate: processes

Forming or treating electrical conductor article

437229, 216 41, B44C 122, C03C 1500, H01L 2100, H01L 2131

Patent

active

054512930

ABSTRACT:
An Al based wiring material layer is formed on an insulating film covering the surface of a semiconductor substrate. The wiring material layer is then selectively etched by a Cl base gas by using a resist layer as a mask, to form a wiring layer. The resist layer is ashed by using a plasma of a mixed gas of an H-and-O containing gas and a F containing gas, such as O.sub.2 /CHF.sub.3 /CH.sub.3 OH, without heating the substrate. Cl components are removed in the form of HCl, and excessive H components are removed in the form of HF to suppress the generation and adherence of H.sub.2 O, thereby improving the anticorrosion performance. The substrate is not heated so that the resist is prevented from a quality change and curing, allowing the resist to be easily removed. Another ashing process may be performed thereafter by using a F containing O.sub.2 gas such as O.sub.2 /CHF.sub.3.

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Tetsuo Kondo, et al., "Effects of H.sub.2 O Downstream on After Corrosion," Proceedings of Symposium on Dry Process, Institute of Electrical Engineers of Japan 117-122 (Oct. 1991).

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