Method of making a void free wafer via vacuum lamination

Details Method of making a void free wafer via vacuum lamination Method of making a void free wafer via vacuum lamination

1987-06-26

1989-04-04

Cashion, Jr., Merrell C.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

156305, 1563082, 228179, 228196, 228221, 228228, B23K 2002, B23K 2024, B23K 3530

Patent

active

048183237

ABSTRACT:
A silicon wafer bonding technique is described utilizing low pressures and a dissolvable gas to substantially eliminate voids formed between the bonding surfaces of two wafers.

REFERENCES:
patent: 2709147 (1955-05-01), Ziegler
patent: 3139680 (1964-07-01), Scuro
patent: 3235957 (1966-02-01), Horsting
patent: 3769133 (1973-10-01), Halberschmidt et al.
patent: 3852136 (1974-12-01), Plumat et al.
patent: 4316757 (1982-02-01), Walsh
patent: 4357193 (1982-11-01), McGann et al.
patent: 4388129 (1983-06-01), Oizumi et al.
patent: 4681718 (1987-07-01), Oldham

Affiliated with

Also associated with

Rating

Method of making a void free wafer via vacuum lamination does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a void free wafer via vacuum lamination, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a void free wafer via vacuum lamination will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-177779