Method of making a vertical photodetector

Details Method of making a vertical photodetector Method of making a vertical photodetector

2011-01-18

2011-01-18

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S273000, C438S370000, C438S546000

Reexamination Certificate

active

07871854

ABSTRACT:
A method includes forming a first opening in a top surface of a semiconductor substrate, performing an implant into the top surface to form a doped region, epitaxially growing a semiconductor layer in the first opening along a bottom of the first opening and along sidewalls of the first opening, wherein the epitaxially growing comprises in-situ doping the semiconductor layer, filling the first opening with a dielectric material, forming a second opening in the dielectric material, wherein a bottom of the second opening exposes the epitaxially grown semiconductor layer and sidewalls of the second opening expose the dielectric material; and filling the second opening with a semiconductor material, wherein the semiconductor material comprises a top electrode and a bottom electrode. The bottom electrode is in electrical contact with the semiconductor layer which is in electrical contact with the doped region. The doped region is laterally adjacent the semiconductor material.

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