Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-02-28
2011-12-20
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S102000, C438S103000, C438S238000, C438S385000, C257SE21409, C257SE21613, C257SE21640, C257SE21645
Reexamination Certificate
active
08080439
ABSTRACT:
A method of making a phase change random access memory (PCM) device comprises forming a PCM stack that includes a heater layer, phase change material layer, and a top electrode layer. A top protection layer is formed overlying the PCM stack. The top protection layer and a first portion of the PCM stack are then patterned, wherein the first portion of the PCM stack excludes the heater layer. A sidewall protection feature is formed along a sidewall of the patterned top protection layer and first portion of the PCM stack. The heater layer is etched using (i) the sidewall protection feature and (ii) the patterned top protection layer and first portion of the PCM stack collectively as a mask to form a self-aligned heater layer bottom electrode of the PCRAM stack, thereby completing a memory bit of the PCRAM device.
REFERENCES:
patent: 7385235 (2008-06-01), Lung
patent: 7388771 (2008-06-01), Ho et al.
patent: 7473921 (2009-01-01), Lam et al.
patent: 7635855 (2009-12-01), Chen et al.
patent: 7772581 (2010-08-01), Lung
Happ et al; “Novel One-Mask Self-Heating Pillar Phase Change Memory”; 2006 Symposium on VLSI Technology Digest of Papers, IEEE.
Song et al; “Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology”; 2006 Symposium on VLSI Technology Digest of Papers, IEEE.
Martinez, Jr. Arturo M.
Rao Rajesh A.
Ahmadi Mohsen
Clingan, Jr. James L.
Freescale Semiconductor Inc.
LandOfFree
Method of making a vertical phase change memory (PCM) and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a vertical phase change memory (PCM) and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a vertical phase change memory (PCM) and a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4313185