Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1996-11-27
1999-03-02
Dutton, Brian
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
H01L 2100
Patent
active
058770380
ABSTRACT:
A highly controllable, compact method for making a vertical cavity laser. By using selective etching and contact layers within the laser cavity, higher efficiencies and lower power requirements for vertical cavity surface emitting lasers (VCSELs) are achieved.
REFERENCES:
patent: 5045499 (1991-09-01), Nishizawa et al.
patent: 5082799 (1992-01-01), Holmstrom et al.
patent: 5293392 (1994-03-01), Shieh et al.
patent: 5358880 (1994-10-01), Lebby et al.
patent: 5416044 (1995-05-01), Chino et al.
patent: 5568504 (1996-10-01), Kock et al.
Coldren Larry A.
DenBaars Steven P.
Dutton Brian
The Regents of the University of California
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